Solution growth of silicon on Al-Si coated quartz glass substrates
| Autor: | Ralf B. Bergmann, Sea-Hoon Lee, E. Bauser, Hans J. Queisser |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Materials science
Silicon Mechanical Engineering Nanocrystalline silicon Mineralogy chemistry.chemical_element Substrate (electronics) Atmospheric temperature range Condensed Matter Physics Grain size Chemical engineering chemistry Mechanics of Materials General Materials Science Wetting Layer (electronics) Quartz |
| Zdroj: | Materials Letters. 19:1-6 |
| ISSN: | 0167-577X |
| DOI: | 10.1016/0167-577x(94)90096-5 |
| Popis: | We investigated the solution growth of silicon on quartz glass in the temperature range 800–580°C. A thin Al-Si layer, evaporated on the quartz glass, served to improve the wetting between the substrate and the Al Ga solvent. We obtained silicon deposits with a grain size up to a few 100 μm. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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