Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF+2‐implanted silicon

Autor:	Charles A. Evans, B. G. Streetman, D. S. Day, Peter Williams, M. Y. Tsai
Rok vydání:	1979
Předmět:	Amorphous silicon Materials science Silicon Annealing (metallurgy) Radiochemistry Analytical chemistry General Physics and Astronomy chemistry.chemical_element Recrystallization (metallurgy) Amorphous solid chemistry.chemical_compound Ion implantation chemistry Getter Fluorine
Zdroj:	Journal of Applied Physics. 50:188-192
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.325689
Popis:	Fluorine distribution profiles for silicon implanted with BF+2 have been measured by SIMS as a function of anneal temperature and time. Anomalous migration of fluorine is observed in samples having amorphized layers after implantation. Outdiffusion of fluorine occurs during recrystallization of the amorphous layer, and fluorine collects in regions of residual damage during annealing. This gettering of fluorine by defects illustrates the residual damage below the amorphized layer in samples implanted at room temperature is more difficult to anneal out than that in samples implanted at lower temperture (∼−110 °C).
Databáze:	OpenAIRE
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