The Two Roots Model and Its Applications in GaAs-Based Devices

Autor:	J. Christina Thyagaraj, W. I. Khan, A. Y. M. Al-Qenaie
Rok vydání:	1997
Předmět:	Hysteresis Condensed matter physics Impurity Chemistry Semiconductor materials Mineralogy Semiconductor device Empirical relationship Condensed Matter Physics Electronic Optical and Magnetic Materials
Zdroj:	physica status solidi (a). 161:581-586
ISSN:	1521-396X 0031-8965
DOI:	10.1002/1521-396x(199706)161:2<581::aid-pssa581>3.0.co;2-l
Popis:	Some experimental investigations have been carried out on GaAs-based devices in connection with the existing two roots model. A new empirical relationship has been established which follows the experimental data for different semiconductor devices exactly. This has been explained in terms of the emission/capture of carriers by midgap traps, impurities etc. involved in the two roots model. It is experimentally established that appearance (and disappearance) of hysteresis in the I-V characteristics could take place in the same device at different temperatures. This phenomenon reemphasizes the importance of the model.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::75016df1f7dce8f106d62fd98703659c https://doi.org/10.1002/1521-396x(199706)161:2<581::aid-pssa581>3.0.co Zobrazit plný text záznamu Plný text