New High-Density Differential Split Gate Flash Memory With Self-Boosting Function

Autor:	Chiu-Wang Lien, Chrong Jung Lin, Zhi-Sung Yang, Ya-Chin King, Wen Chao Shen, Te-Liang Lee, Hsin-Wei Pan, Yue-Der Chih
Rok vydání:	2013
Předmět:	Non-volatile memory Sense amplifier Computer science Charge trap flash Electronic engineering Racetrack memory Semiconductor memory Non-volatile random-access memory Electrical and Electronic Engineering Flash file system Flash memory Electronic Optical and Magnetic Materials
Zdroj:	IEEE Electron Device Letters. 34:1127-1129
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2013.2271498
Popis:	This letter presents a novel high density differential split gate flash memory with self-boosting function realized by 0.18- μm embedded memory technology from Taiwan Semiconductor Manufacturing Company. The cell has a pair of symmetric floating gates to perform differential read for storage electrons in the dual gate. Besides, a simple and nondecoding self-boosting operation is built in to automatically boost threshold levels of the symmetric cells to prevent a long-term charge loss or data degradation problem. Since the cell process and tip erase structure are totally inherited from the proven split-gate flash technology, the highly efficient program and erase performances are remained in the new cell. This implemented self-boosting operation provides a promising solution for reliable embedded memory for advanced CMOS technology.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::74faad09e7ea24085637db5b8a312674 https://doi.org/10.1109/led.2013.2271498 Zobrazit plný text záznamu