Electrochemical studies of copper-doping processes in layered crystals of the family [(Ge,Sn,Pb)(Te,Se)] m [(Bi,Sb)2(Te,Se)3] n (m, n = 0, 1, 2…)

Autor: M. A. Korzhuev, E. S. Avilov, M. A. Kretova
Rok vydání: 2017
Předmět:
Zdroj: Semiconductors. 51:898-901
ISSN: 1090-6479
1063-7826
Popis: The processes of copper intercalation into the van der Waals gaps of layered ternary alloys of the family [(Ge,Sn,Pb)(Te,Se)] m [(Bi,Sb)2(Te,Se)3] n (m, n = 0, 1, 2…) to modify the electrical, mechanical, and other physical properties of samples are studied. A proportional decrease in the intercalated copper concentration ΔN Cu with decreasing relative volume density of van der Waals gaps D VdW = s –1 and with increasing package plyness s and package thickness ξ1 under variations in the composition of ternary alloys is revealed.
Databáze: OpenAIRE