Electrochemical studies of copper-doping processes in layered crystals of the family [(Ge,Sn,Pb)(Te,Se)] m [(Bi,Sb)2(Te,Se)3] n (m, n = 0, 1, 2…)
Autor: | M. A. Korzhuev, E. S. Avilov, M. A. Kretova |
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Rok vydání: | 2017 |
Předmět: |
Materials science
Metallurgy Intercalation (chemistry) Analytical chemistry chemistry.chemical_element Condensed Matter Physics Electrochemistry Copper Copper doping Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials symbols.namesake chemistry Relative Volume symbols van der Waals force Ternary operation |
Zdroj: | Semiconductors. 51:898-901 |
ISSN: | 1090-6479 1063-7826 |
Popis: | The processes of copper intercalation into the van der Waals gaps of layered ternary alloys of the family [(Ge,Sn,Pb)(Te,Se)] m [(Bi,Sb)2(Te,Se)3] n (m, n = 0, 1, 2…) to modify the electrical, mechanical, and other physical properties of samples are studied. A proportional decrease in the intercalated copper concentration ΔN Cu with decreasing relative volume density of van der Waals gaps D VdW = s –1 and with increasing package plyness s and package thickness ξ1 under variations in the composition of ternary alloys is revealed. |
Databáze: | OpenAIRE |
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