Scaling in the Quantum Hall Regime for a Double Quantum Well Nanostructure in High Magnetic Field

Autor:	A. S. Klepikova, V. I. Okulov, M. V. Yakunin, Yurii G. Arapov, V. N. Neverov, N. G. Shelushinina, G. I. Harus, T. B. Charikova, Sergey G. Novokshonov, S. V. Gudina
Rok vydání:	2014
Předmět:	Physics Nanostructure Condensed matter physics Thermal Hall effect Quantum point contact Macroscopic quantum phenomena Quantum Hall effect Condensed Matter Physics Atomic and Molecular Physics and Optics Magnetic field Quantum spin Hall effect Quantum mechanics General Materials Science Scaling
Zdroj:	Solid State Phenomena. 215:208-213
ISSN:	1662-9779
DOI:	10.4028/www.scientific.net/ssp.215.208
Popis:	The longitudinal ρxx(B) and Hall ρxy(B) magnetoresistances are investigated in the integer quantum Hall effect regime in n-InGaAs/GaAs double quantum well nanostructures in the magnetic fields B up to 16 T at temperatures T = (0.05-4.2) K before and after IR illumination. The analysis of the quantum Hall effect plateau-plateau transitions based on the scaling hypothesis with regard to electron-electron interaction was carried out.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::74dbf867964f5f3c42055aa6858d8a27 https://doi.org/10.4028/www.scientific.net/ssp.215.208 Zobrazit plný text záznamu