| Autor: |
H. M. Yoo, F. S. Ohuchi, G. H. Kim, J. L. Gray |
| Rok vydání: |
1994 |
| Předmět: |
|
| Zdroj: |
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:1059 |
| ISSN: |
0734-211X |
| DOI: |
10.1116/1.587087 |
| Popis: |
Unique properties of homoepitaxial (111) GaAs layers grown at low temperatures have not been realized mainly due to very narrow temperature range for the layer‐by‐layer growth. In this study, molecular‐beam epitaxy growth of GaAs (111) layers on a tilted (111)B substrate at 350 °C is reported. Reflective high‐energy electron diffraction observation during the low‐temperature growth shows an initial surface structure of (2 × 2) which changes to (1 × 1) at the beginning of the growth. Diffraction spots appear at the growth layer thickness of 75 nm. These extra spots are attributed to twins and stacking faults confirmed by transmission electron microscopy. GaAs (111) layers grown at 350 °C have a high density of twins and a specular surface. High‐temperature growth of (111) GaAs on a low‐temperature buffer layer leads to a tenfold increase in the surface roughness. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
