Semiconductor–Metal-Grating Slow Wave Amplifier for Sub-THz Frequency Range
| Autor: | Joachim Oberhammer, Petr Makhalov, Dmitri Lioubtchenko |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Imagination Materials science business.industry Terahertz radiation Amplifier media_common.quotation_subject 01 natural sciences Temperature measurement Electronic Optical and Magnetic Materials Harmonic analysis Semiconductor 0103 physical sciences Optoelectronics Electrical and Electronic Engineering business Science technology and society Excitation media_common |
| Zdroj: | IEEE Transactions on Electron Devices. 66:4413-4418 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | The concept of semiconductor slow wave amplifier aimed at sub-terahetz frequencies is studied numerically. The scheme of the transversal amplifier with metal grating is proposed. The requirements on semiconductor parameters that provide positive net amplification are given and discussed, and the choice of GaN is explained. For the proposed device, different regimes are studied, and the dependence of the net amplification on device parameters is given. One regime has high linear gain, more than 50 dB/mm. The proof-of-principle structure for the excitation of the device in this regime is proposed and simulated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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