Assessing polar and azimuthal correlations for an oriented mosaic of (001) diamond crystallites on (001) silicon
| Autor: | T.J. Kistenmacher, Brian R. Stoner, Scott A. Ecelberger |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Materials science
Condensed matter physics Silicon Misorientation Mechanical Engineering Material properties of diamond chemistry.chemical_element Diamond General Chemistry Substrate (electronics) Chemical vapor deposition engineering.material Electronic Optical and Magnetic Materials Crystallography chemistry Materials Chemistry engineering Texture (crystalline) Crystallite Electrical and Electronic Engineering |
| Zdroj: | Diamond and Related Materials. 4:1289-1295 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/0925-9635(95)00305-3 |
| Popis: | The heteroepitaxial growth of diamond films on (001) silicon by bias-enhanced, microwave-assisted chemical vapor deposition leads to a mosaic of highly oriented crystallites. The majority of crystallites adopt a “cube-on-cube” orientation (diamond{ hkl } ∥sili-con{ hkl }), but there are a variety of minor growth textures (including diamond (111)∥silicon(001), diamond(311)∥silicon(001), and diamond(220)∥silicon(001)). Within the diamond(001)∥silicon(001) domain, there is a distribution of crystallite orientations and concurrently heteroepitaxial relationships. The X-ray precession method has been employed here, together with the more widely adopted X-ray rocking curve technique, to assess quantitatively the nature and breadth of this distribution of orientations and its dependence on film thickness. In brief, the X-ray scattering from the mosaic of crystallites can be well approximated by simple gaussian functions, with misorientation angles of a few degrees both parallel (azimuthal) and normal (polar) to the surface of the silicon substrate. The dependence of these parameters on film thickness is, however, non-monotonic with minima near a diamond film thickness of 20 μm. |
| Databáze: | OpenAIRE |
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