Low‐temperature deposition of silicon dioxide films from electron cyclotron resonant microwave plasmas
| Autor: | K. C. Kao, T.T. Chau, S. R. Mejia, Douglas A. Buchanan, T. V. Herak, Douglas J. Thomson |
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| Rok vydání: | 1989 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 65:2457-2463 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.342815 |
| Popis: | Silicon dioxide films were deposited on crystalline silicon substrates by electron cyclotron resonant (ECR) microwave plasma‐enhanced chemical vapor deposition (PECVD). Films were grown on Si〈100〉 substrates at temperatures of 140–600 °C, flow rates of 0.5–10 sccm SiH4, 10–30 sccm O2, and at a pressure of 10−3 Torr. Infrared absorption spectroscopy of the samples indicated no detectable SiH, OH, or SiOH groups. Neither an afterglow chemistry nor He dilution was required to eliminate H impurities as was previously reported for silicon oxide films deposited from rf plasmas. This suggests that significant differences exist between rf and ECR microwave plasma chemistries. We have found that the stoichiometry and index of refraction was not sensitive to oxidant ratio for a wide range of conditions in contrast to other studies. Stoichiometric SiO2 films, with good physical properties, were grown for a much wider range of oxidant ratios relative to those which are characteristic of the rf PECVD technique. In add... |
| Databáze: | OpenAIRE |
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