Novel silicon-containing resists for EUV and 193-nm lithography

Autor:	Steven J. Rhyner, Jonathan L. Cobb, Uzodinma Okoroanyanwu, Craig C. Henderson, Veena Rao, Larry D. Boardman, Carl R. Kessel
Rok vydání:	1999
Předmět:	chemistry.chemical_classification Materials science Silicon Extreme ultraviolet lithography Maleic anhydride chemistry.chemical_element Polymer Methacrylate chemistry.chemical_compound chemistry Chemical engineering Resist Etching (microfabrication) Polymer chemistry Lithography
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
DOI:	10.1117/12.350204
Popis:	Two families of polymers have been prepared and evaluated as silicon-containing bilayer resist candidates at both 193 nm and 13.4 nm (EUV). Both families of polymers are based on a tertiary ester protecting group in which the ester group contains a silicon cluster. The PRB family of polymers are random methacrylate copolymers and the PRC family are alternating maleic anhydride/norbornene polymers. The PRB family shows good resolution and sensitivity at both 193 nm and EUV, but suffers from adhesion failure between the imaging layer and the underlayer. The PRC polymers show good adhesion to underlayers and can print features at
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::74b9e83668430329ebd8b8c9cc3f5bca https://doi.org/10.1117/12.350204 Zobrazit plný text záznamu