Zinc Oxide Doped Indium Oxide Ohmic Contacts to p-Type GaN
| Autor: | Lung-Chien Chen, Chih-Ming Chen, Chie-Sheng Liu, Lu-Sheng Hong |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
Renewable Energy Sustainability and the Environment business.industry Doping Contact resistance Oxide chemistry.chemical_element Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law Electrode Materials Chemistry Electrochemistry Optoelectronics business Ohmic contact Indium Light-emitting diode Diode |
| Zdroj: | Journal of The Electrochemical Society. 153:G931 |
| ISSN: | 0013-4651 |
| DOI: | 10.1149/1.2337769 |
| Popis: | We report on the zinc oxide doped indium oxide (ZIO) transparent ohmic contact to the p-GaN. Optimum conditions were selected to minimize the lowest specific contact resistance to 1.4 X 10 -4 Ω cm 2 , as examined by transmission line model after heat treatment process at an alloying temperature of 500°C for 10 min in air. ZIO films were also applied to GaN-based light-emitting diodes (LEDs) to form an electrode with a p-type ohmic contact. A light output power and an external quantum efficiency of the LED with ZIO contact of 5.61 mW and 10.63%, respectively, were measured at a forward current of 20 mA at room temperature. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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