| Autor: |
R. Mourot, A. Gouvea, D. Parat, M. Gaye, P. Reynier, A. Cardoso, Alexandre Giry, Ayssar Serhan, S. Nogueira, P. Kauv |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). |
| DOI: |
10.1109/rfic51843.2021.9490483 |
| Popis: |
This paper presents the first high-power SOI-CMOS power amplifier (PA) embedded in a Fan-Out Wafer Level Package (FOWLP) and addressing 2.4 GHz Wi-Fi 6 applications. At 2.44 GHz, the PA delivers 35.1 dBm of saturated output power (P sat ) with 53% of peak PAE and 29.5 dB of power gain. Without DPD, the PA achieves state-of-the art measured performance with 26.5/24.5/21.9 dBm of linear output power (P out ) for an EVM (Error Vector Magnitude) of −30/−35/−43 dB with an operating current of 336/270/210 mA for MCS7/9/11 40MHz signals respectively. The PA shows robust operation under extreme load mismatch (8:1 VSWR) and temperature (-40 to 80°C) conditions. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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