Effect of N incorporation on boron penetration from p+ polycrystalline-Si through HfSixOy films

Autor:	A. LiFatou, Manuel Quevedo-Lopez, M. El-Bouanani, M. J. Kim, James J. Chambers, Luigi Colombo, Robert M. Wallace, Bruce E. Gnade, Mark R. Visokay
Rok vydání:	2003
Předmět:	Materials science Physics and Astronomy (miscellaneous) Analytical chemistry chemistry.chemical_element Dielectric Penetration (firestop) Thermal diffusivity Nitrogen law.invention Crystallography chemistry law Grain boundary Crystallite Crystallization Boron
Zdroj:	Applied Physics Letters. 82:4669-4671
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1586483
Popis:	We demonstrate that incorporating N in Hf-silicate films reduces B penetration through the dielectric film. By modeling the B depth profiles, we calculated the B diffusivities through Hf-silicate (HfSixOy) to be ∼2× higher than the corresponding diffusivities for Hf-silicon oxynitride (HfSixOyNz). B diffusion through grain boundaries after HfSixOy crystallization is believed to be responsible for the enhanced B diffusivity observed. Suppression of crystallization observed in HfSixOyNz films is attributed to the lower Hf content in the films and the incorporation of N. The decreased B penetration observed in HfSixOyNz is a combination of absence of grain boundaries and the fact that N blocks B diffusion by occluding diffusion pathways. The minimum temperatures for B penetration are estimated to be approximately 950 and 1050 °C for HfSixOy and HfSixOyNz, respectively.
Databáze:	OpenAIRE
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