| Autor: |
B. Hubner, V. Piataev, H. Burkhrd, E. Kuphal, S. Jochum, H. Janning, S. Hansmann, R. Gobel, B. Kempf |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129). |
| DOI: |
10.1109/iciprm.1998.712476 |
| Popis: |
Buried index-coupled and gain-coupled distributed feedback (DFB) lasers (/spl lambda/=1.55 /spl mu/m) and laser arrays with wavelength spacing between channels of 1.6 nm and 3.2 nm have been realized and investigated on different strain-compensated InGaAsP/InGaAsP MQW structures. Which are grown on InP by MOVPE with constant As/P ratio under N/sub 2/ as carrier gas for the first time. The grown structures exhibit an extremely good wavelength homogeneity (/spl sigma/=0.75 nm). The lowest threshold current of 2.3 mA at 20/spl deg/C has been obtained for uncoated index-coupled DFB lasers. More than 10 mW CW and 70 mW pulsed output power are achieved at an injection current of 200 mA from one facet of a DFB laser with AR coating. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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