Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
| Autor: | Hiroshi Amano, K. D. Scherbatchev, Alexander Y. Polyakov, A. V. Markov, T. G. Yugova, N. B. Smirnov, Takeshi Kawashima, V. T. Bublik, A. V. Govorkov, E. A. Petrova |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
Silicon business.industry Doping Fermi level Analytical chemistry Wide-bandgap semiconductor General Physics and Astronomy chemistry.chemical_element Chemical vapor deposition Epitaxy symbols.namesake chemistry symbols Optoelectronics Metalorganic vapour phase epitaxy Dislocation business |
| Zdroj: | Journal of Applied Physics. 105:063708 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.3078769 |
| Popis: | Structural and electrical properties of nonpolar m-GaN films grown on m-SiC using standard metalorganic chemical vapor deposition (MOCVD) and two versions of sidewall epitaxial lateral overgrowth were studied. It is shown that lateral overgrowth allows one to dramatically reduce the dislocation density from over 109 cm−2 to ∼107 cm−2. In good correlation with that we observed a strong reduction in the density of electron traps Ec−0.25 eV and Ec−0.6 eV from over 1015 cm−3 to ∼1014 cm−3, respectively, in MOCVD m-GaN and in laterally overgrown m-GaN. Preliminary studies of the effects of changing the V/III ratio and of Si doping were performed. The MOCVD m-GaN films grown with high V/III ratio of 1000 were semi-insulating, with the Fermi level pinned near the 0.6 eV traps. Decreasing the V/III value to 250 shifted the Fermi level upward, close to the level of the 0.25 eV traps. Si doping in laterally overgrown samples strongly suppressed the formation of major electron traps but enhanced the formation of hol... |
| Databáze: | OpenAIRE |
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