The effective mass and Landé factor of the degenerate electron gas

Autor:	K Schörkhuber, H M Böhm
Rok vydání:	2000
Předmět:	business.industry Chemistry Landé g-factor Degenerate energy levels Condensed Matter Physics Vertex (geometry) Formalism (philosophy of mathematics) Effective mass (solid-state physics) Semiconductor Quantum mechanics General Materials Science Atomic physics business Fermi gas
Zdroj:	Journal of Physics: Condensed Matter. 12:2007-2020
ISSN:	1361-648X 0953-8984
Popis:	We study the effective mass and the Lande factor for the three-dimensional as well as the two-dimensional degenerate electron gas. The influences of specific approximations to the self-energy and the vertex, equivalently formulated in terms of static and local effective interactions, are examined, with the aim of developing a legitimate and straightforward description of realistic low-dimensional semiconductor structures. The results obtained are tested against reference data from the literature. We further apply the formalism to a Si-SiO2 metal oxide-semiconductor (MOS) structure and compare the predictions with experiment.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::74943d6e41fbbcff848831168d8341a0 https://doi.org/10.1088/0953-8984/12/9/305 Zobrazit plný text záznamu