Fabrication of 100 nm polysilicon-emitter transistors using e-beam lithography
| Autor: | P.M.A. Moors, M.N. Webster, H.F.F. Jos, J. Romijn, S. Radelaar, A.H. Verbruggen, B. Löchel, A. Tuinhout |
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| Rok vydání: | 1995 |
| Předmět: |
Fabrication
Materials science Dopant business.industry Transistor Bipolar junction transistor Analytical chemistry Condensed Matter Physics Atomic and Molecular Physics and Optics Computer Science::Other Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention law Physics::Accelerator Physics Optoelectronics Electrical and Electronic Engineering Reactive-ion etching business Lithography Electron-beam lithography Common emitter |
| Zdroj: | Microelectronic Engineering. 27:91-94 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(94)00063-z |
| Popis: | Polysilicon emitter transistors with an emitter width ranging from 4.8 down to 0.1 μm have been made by electron-beam lithography and reactive ion etching. All devices work properly and have an almost ideal collector current. Devices with down-scaled emitter width show a decrease in current gain caused by the reduced dopant diffusion yielding shallower emitter junctions. |
| Databáze: | OpenAIRE |
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