Optical properties of undoped and tin-doped nanostructured In2O3thin films deposited by spray pyrolysis
| Autor: | Z. Sofiani, Mohamed El Jouad, Mohammed Addou, Amina Kachouane, N. Fellahi |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Dopant Band gap Doping Oxide Analytical chemistry chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Electrical resistivity and conductivity 0103 physical sciences Thin film 0210 nano-technology Tin Instrumentation Indium |
| Zdroj: | The European Physical Journal Applied Physics. 74:24611 |
| ISSN: | 1286-0050 1286-0042 |
| DOI: | 10.1051/epjap/2015150383 |
| Popis: | Tin-doped indium oxide (In 2 O 3 :Sn) thin films in different concentrations (Sn = 0, 3, 5, 8 at.%) were deposited by reactive chemical pulverisation spray pyrolysis on heated glass substrates at 500 °C. The effect of the tin dopant on the nonlinear optical properties was investigated using X-ray diffraction, transmission, electrical resistivity and third harmonic generation (THG). All films were polycrystalline, and crystallised in a cubic structure with a preferential orientation along the (400) direction. The Sn (5 at.%) doped In 2 O 3 thin films exhibited a lower resistivity of 3 × 10 -4 Ω cm, and higher transmission in the visible region of about 94%. Optical parameters, such as the extinction coefficient ( k ), refractive index ( n ) and energy band gap ( E g ), were also studied to show the composition-dependence of tin-doped indium oxide films. The nonlinear properties of the In 2 O 3 :Sn thin films have been found to be influenced by doping concentration, and the best value of χ (3) = 3 × 10 -11 (esu) was found for the 5 at.% doped sample. |
| Databáze: | OpenAIRE |
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