| Autor: |
Priyanka de Souza, Peng Luo, Sankara Narayanan Ekkanath Madathil |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia). |
| DOI: |
10.1109/ecce-asia49820.2021.9479243 |
| Popis: |
In this paper a 1.2 kV, 50 A trench clustered IGBT is experimentally demonstrated in field-stop technology for the first time. Due to the optimized field stop layer design, the off-state leakage current is lower than 1 mA at 175°C. A low on-state voltage drop of 1.6 V is achieved at 150°C. The saturation current levels are effectively controlled by the self-clamping feature. Moreover, experimental results confirm that the fabricated devices exhibit dynamic avalanche-free switching performance as well as high dV/dt controllability. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
