On the Understanding of Defects in Short-Term Negative Bias Temperature Instability (NBTI) for Sub-20-nm DRAM Technology

Autor: Da Wang, Longda Zhou, Yongkang Xue, Pengpeng Ren, Zixuan Sun, Zirui Wang, Jianping Wang, Blacksmith Wu, Zhigang Ji, Runsheng Wang, Ru Huang
Rok vydání: 2023
Předmět:
Zdroj: IEEE Electron Device Letters. 44:939-942
ISSN: 1558-0563
0741-3106
DOI: 10.1109/led.2023.3266361
Databáze: OpenAIRE