Tuning the p-type Schottky barrier in 2D metal/semiconductor interface:boron-sheet on MoSe2, and WSe2
| Autor: | Roberto H. Miwa, W R M Couto, Adalberto Fazzio |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Condensed matter physics business.industry Schottky barrier chemistry.chemical_element Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences symbols.namesake Semiconductor chemistry Transition metal 0103 physical sciences Borophene symbols General Materials Science van der Waals force 010306 general physics 0210 nano-technology business Boron Ohmic contact |
| Zdroj: | Journal of Physics: Condensed Matter. 29:405002 |
| ISSN: | 1361-648X 0953-8984 |
| DOI: | 10.1088/1361-648x/aa7f0c |
| Popis: | Van der Waals (vdW) metal/semiconductor heterostructures have been investigated through first-principles calculations. We have considered the recently synthesized borophene (Mannix et al 2015 Science 350 1513), and the planar boron sheets (S1 and S2) (Feng et al 2016 Nat. Chem. 8 563) as the 2D metal layer, and the transition metal dichalcogenides (TMDCs) MoSe2, and WSe2 as the semiconductor monolayer. We find that the energetic stability of those 2D metal/semiconductor heterojunctions is mostly ruled by the vdW interactions; however, chemical interactions also take place in borophene/TMDC. The electronic charge transfer at the metal/semiconductor interface has been mapped, where we find a a net charge transfer from the TMDCs to the boron sheets. Further electronic structure calculations reveal that the metal/semiconductor interfaces, composed by planar boron sheets S1 and S2, present a p-type Schottky barrier which can be tuned to a p-type ohmic contact by an external electric field. |
| Databáze: | OpenAIRE |
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