Optical characterization of GaAs pyramid microstructures formed by molecular beam epitaxial regrowth on pre-patterned substrates

Autor:	Paul N. Stavrinou, R. E. Pritchard, Tim Jones, M. J. Ashwin, R. S. Williams, Glenn Parry, Rupert F. Oulton, J.H. Neave
Rok vydání:	2001
Předmět:	Total internal reflection Materials science business.industry General Physics and Astronomy Microstructure Epitaxy Gallium arsenide chemistry.chemical_compound Optics chemistry Optoelectronics Charge-coupled device business Molecular beam Molecular beam epitaxy Pyramid (geometry)
Zdroj:	Journal of Applied Physics. 90:475-480
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.1376419
Popis:	Arrays of GaAs pyramids with square (001) bases of length 1–5 μm have been fabricated by molecular beam epitaxy regrowth on pre-patterned GaAs (001) substrates. The optical properties of the pyramid faces have been studied by microreflection and microtransmission imaging measurements with light (λ=900–1000 nm) incident through the pyramid base. Digitized charge coupled device images indicate that total internal reflection occurs at the {110} pyramid facets and that their reflectivities are greater than 80%, provided overgrowth of the facets does not occur. These properties suggest that such structures may be suitable as the top mirror in novel micron-scale vertical microcavity devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::746afc3233cc5ce4c74386343053a013 https://doi.org/10.1063/1.1376419 Zobrazit plný text záznamu