Microwave Nanosecond Pulse Burnout Properties of GsAs MESFETs

Autor:	M.L. Thorn, J.J. Whalen, M.C. Calcatera
Rok vydání:	2005
Předmět:	Materials science business.industry Energy absorbing Optoelectronics Nanosecond pulse Pulsed power Burnout business Microwave Pulse (physics)
Zdroj:	MTT-S International Microwave Symposium Digest.
DOI:	10.1109/mwsym.1979.1124096
Popis:	Microwave nsec pulse burnout data have been measured at 9 GHz for three 1 micron gate MESFETs. Values of incident pulse power and absorbed energy required to cause burnout are presented and discussed. Also discussed are the dominant failure modes for the overstressed MESFETs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::746aec03a3091341ed9b995d209172eb https://doi.org/10.1109/mwsym.1979.1124096 Zobrazit plný text záznamu