3.5-mm-square InGaAs p-i-n photodiodes and their application to optical-axis arrangement between 1.3-μm laser diodes and a SMF
| Autor: | Yasushi Fujimura, H. Terauchi, Naoyuki Yamabayashi, Y. Kuhara |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Materials science
business.industry Single-mode optical fiber Condensed Matter Physics Laser Atomic and Molecular Physics and Optics Gallium arsenide law.invention Photodiode Optical axis Responsivity chemistry.chemical_compound chemistry law Electrode Optoelectronics Electrical and Electronic Engineering business Diode |
| Zdroj: | IEEE Journal of Quantum Electronics. 32:1916-1921 |
| ISSN: | 0018-9197 |
| DOI: | 10.1109/3.541677 |
| Popis: | InGaAs p-i-n photodiodes (PD) with 3.5-mm/spl times/3.5-mm-large photosensitive area have been fabricated using chlorine-vapor-phase-epitaxial (C-VPE) growth. They showed high responsivity of 0.95 A/W (/spl lambda/=1.3 /spl mu/m) and 1.2 A/W (/spl lambda/=1.55 /spl mu/m) and good homogeneity in the whole area. Long-term reliability was confirmed through high-temperature aging tests at 150/spl deg/C up to 5200 hours. A PD with two pairs of parallel electrodes (PE-PD) was applied to optical-axis arrangement between 1.3-/spl mu/m laser diodes (LD's) and a single mode fibre (SMF). The beam position of a LD was detected in error within /spl plusmn/20 /spl mu/m using PE-PD prior to coupling of a LD beam into a SMF. Total inspection time was reduced to one third the original time. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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