Low Temperature Preparation of TiO2 Thin Films by Plasma-Enhanced Chemical Vapor Deposition
| Autor: | Yoshimasa Kumashiro, Sadao Murasawa, Yoichi Takaoka, Yoshiki Kinoshita |
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| Rok vydání: | 1993 |
| Předmět: | |
| Zdroj: | Journal of the Ceramic Society of Japan. 101:514-517 |
| ISSN: | 1882-1022 0914-5400 |
| DOI: | 10.2109/jcersj.101.514 |
| Popis: | Thin films of TiO2 were prepared from gas mixtures of TiCl4 and O2 using rf glow discharge. TiO2 films were grown on glass, Si, Ti and MgO substrates at temperatures as low as 200°C by applying an rf power of 10W, although no film was deposited without glow discharge even at 470°C except on the Ti substrate. As the rf power was increased, the deposition rate increased and attained the maximum value which was more than five times as large as the initial deposition rate, but decreased in applying excessive rf powers. TiO2 crystals of anatase phase were grown at temperatures lower than those for growth of rutile phase. The temperature at which the rutile phase formed depended on the substrate material. Rutile films which were grown on MgO (100) at temperatures above 300°C exhibited highly [110]-oriented crystal growth. For these films, the surface morphology and the degree of the orientation of polycrystallites in the [110] direction depended on the rf power. |
| Databáze: | OpenAIRE |
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