Large-Area and High-Speed Deposition of Microcrystalline Silicon Film by Inductive Coupled Plasma using Internal Low-Inductance Antenna
| Autor: | Kiyoshi Ogata, Yuichi Setsuhara, Hirokazu Kaki, Tsukasa Hayashi, Yasuaki Nishigami, Atsushi Tomyo, Akinori Ebe, Masaki Fujiwara, Kiyoshi Kubota, Eiji Takahashi |
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| Rok vydání: | 2007 |
| Předmět: |
Amorphous silicon
Materials science Physics and Astronomy (miscellaneous) business.industry General Engineering Nanocrystalline silicon Analytical chemistry General Physics and Astronomy Substrate (electronics) Oxide thin-film transistor chemistry.chemical_compound chemistry Thin-film transistor Plasma-enhanced chemical vapor deposition Optoelectronics Inductively coupled plasma business Layer (electronics) |
| Zdroj: | Japanese Journal of Applied Physics. 46:1280-1285 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | A novel inductively-coupled RF plasma source with internal low-inductance antenna (LIA) units was developed to synthesize microcrystalline silicon (µc-Si) film on a large glass substrate. A film thickness profile on a 600×720 mm2 glass substrate was achieved with high plasma uniformity and a variation of less than ±5% without a standing-wave effect. Raman and transmission electron microscope (TEM) analysis revealed that highly crystallized µc-Si films, which were directly deposited on a glass substrate, were synthesized without an amorphous-phase incubation layer at the substrate interface. A bottom-gate thin-film transistor (BG-TFT) was fabricated employing an optimized µc-Si layer and exhibited a field-effect mobility of 3 cm2/(Vs), which is one order higher than that of a typical amorphous silicon TFT. |
| Databáze: | OpenAIRE |
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