Structure and morphology of Ru films grown by atomic layer deposition from 1-ethyl-1’-methyl-ruthenocene
| Autor: | Aleks Aidla, Mikko Ritala, Kaupo Kukli, Alma Asta Kiisler, Massimo Tallarida, Marianna Kemell, Jaan Aarik, Markku Leskelä, Jun Lu, Indrek Jõgi, Teet Uustare |
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| Rok vydání: | 2010 |
| Předmět: |
010302 applied physics
Materials science Silicon Analytical chemistry chemistry.chemical_element Nanotechnology 02 engineering and technology Combustion chemical vapor deposition 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Ruthenium oxide Inorganic Chemistry Atomic layer deposition Carbon film chemistry 0103 physical sciences Materials Chemistry Atomic layer epitaxy Thin film 0210 nano-technology |
| Zdroj: | Journal of Crystal Growth. 312:2025-2032 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2010.03.033 |
| Popis: | Ru thin films were grown on TiO 2 , Al 2 O 3 , HfO 2 , and ZrO 2 films as well as on HF-etched silicon and SiO 2 -covered silicon by atomic layer deposition from 1-ethyl-1’-methyl-ruthenocene, (CH 3 C 5 H 4 )(C 2 H 5 C 5 H 4 )Ru, and oxygen. The growth of Ru was obtained and characterized at temperatures ranging from 250 to 325 °C. On epitaxial rutile, highly oriented growth of Ru with hexagonal structure was achieved, while on other substrates the films possessed nonoriented hexagonal structure. Ruthenium oxide was not detected in the films. The lowest resistivity value obtained for 5.0–6.6 nm thick films was 26 μΩ cm. The conductivity of the films depended somewhat on the deposition cycle time parameters and, expectedly, more strongly on the amount of deposition cycles. Increase in the deposition temperature of underlying metal oxide films increased the conductivity of Ru layers. |
| Databáze: | OpenAIRE |
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