Physical/chemical characterization and device applications of transparent zinc–tin–oxide thin films deposited using RF sputtering
| Autor: | Jin-Ha Hwang, Woo-Ri Do |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Annealing (metallurgy) business.industry Process Chemistry and Technology Gate dielectric Analytical chemistry Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid Crystallinity X-ray photoelectron spectroscopy Thin-film transistor Sputtering Materials Chemistry Ceramics and Composites Optoelectronics Thin film business |
| Zdroj: | Ceramics International. 40:9809-9816 |
| ISSN: | 0272-8842 |
| DOI: | 10.1016/j.ceramint.2014.02.070 |
| Popis: | Amorphous Zn–Sn–O (zinc–tin–oxide, ZTO) thin films were deposited with a mixed ZnO/SnO 2 target through RF sputtering. The deposited Zn–Sn–O thin films were characterized using physical/chemical probing tools, such as optical characterization based on spectroscopic ellipsometry, surface morphology via atomic force microscopy, chemical information determined through X-ray photoelectron spectroscopy, and structural monitoring of crystallinity using X-ray diffraction. The ZTO thin-film transistors were constructed with a bottom-gate structure using thermally grown SiO 2 as the gate dielectric. The Zn–Sn–O TFTs were characterized in terms of the channel thickness, dielectric thickness, and annealing temperatures, and degradation tests were performed at higher temperatures than under ambient conditions. The Zn–Sn–O thin film transistors were optimized at a ZTO thickness of 40 nm, a SiO 2 gate dielectric thickness of 100 nm after annealing at 500 °C, and had an on/off ratio of 8.22×10 +7 , a field-effect mobility of 12.90 cm 2 /V s, a threshold voltage of 4.32 V, and an S-slope of 0.69 V/decade. |
| Databáze: | OpenAIRE |
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