A Complete Analytical Model of Surface Potential and Drain Current for an Ultra Short Channel Double Gate Asymmetric Junctionless Transistor

Autor:	Nipanka Bora, Rupaban Subadar
Rok vydání:	2019
Předmět:	Surface (mathematics) Materials science business.industry law Transistor Optoelectronics Double gate Electrical and Electronic Engineering business Drain current Electronic Optical and Magnetic Materials law.invention Communication channel
Zdroj:	Journal of Nanoelectronics and Optoelectronics. 14:1283-1289
ISSN:	1555-130X
DOI:	10.1166/jno.2019.2643
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::74581adedae06ebdf743bbcced9b0d8f https://doi.org/10.1166/jno.2019.2643 Zobrazit plný text záznamu