Characteristics of CMOS devices fabricated using high quality thin PECVD gate oxide
| Autor: | L.K. Wang, W. Chang, D.S. Wen, A.A. Bright, T.N. Nguyen |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
business.industry Gate dielectric technology industry and agriculture Oxide food and beverages Time-dependent gate oxide breakdown Substrate (electronics) chemistry.chemical_compound Quality (physics) CMOS chemistry Gate oxide Plasma-enhanced chemical vapor deposition Electronic engineering Optoelectronics business |
| Zdroj: | International Technical Digest on Electron Devices Meeting. |
| DOI: | 10.1109/iedm.1989.74322 |
| Popis: | n- and p-channel FETs at 0.25- mu m channel length are fabricated utilizing very thin (35-70 AA) PECVD (plasma-enhanced chemical-vapor-deposited) oxide as the gate dielectric. This oxide can be deposited at very low substrate temperature ( > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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