Fabrication of C-Doped p-AlGaInN Light-Emitting Diodes by the Insertion of Al4C3

Autor:	Yoshiki Naoi, Dohyung Kim, Kazuya Yamazumi, Shiro Sakai, Heesub Lee
Rok vydání:	2013
Předmět:	Materials science business.industry General Engineering General Physics and Astronomy Electroluminescence Epitaxy Active layer law.invention Full width at half maximum law Optoelectronics Metalorganic vapour phase epitaxy business Quantum well Diode Light-emitting diode
Zdroj:	Japanese Journal of Applied Physics. 52:08JG18
ISSN:	1347-4065 0021-4922
DOI:	10.7567/jjap.52.08jg18
Popis:	A C-doped p-AlGaInN light-emitting diode (LED) fabricated from III–V nitride was grown by metalorganic vapor phase epitaxy (MOVPE) by the insertion of Al4C3/Al2O3(0001). Al4C3/Al2O3(0001) with a size of 1×1 mm2 was placed at the center of a 2-in. Al2O3(0001) substrate before growing the LED. An InGaN/GaN multi quantum well (MQW) was used as an active layer. The concentrations of C and Si were different with the distance of Al4C3. Maximum C (p≧1018 cm-3) and Si (n≧1019 cm-3) intensities were observed at the edge and the half of center and edge on the grown wafer, respectively. The voltage of the C-doped AlGaInN LED was 6.9 V at 10 mA. The peak electroluminescence (EL) wavelength and the full-width at half-maximum (FWHM) were 395 nm and about 30 nm, respectively. It was clearly proven that u-Al0.19Ga0.81N became p-Al0.19Ga0.81N.
Databáze:	OpenAIRE
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