Electron energy loss fine structure measurements of silicon nitride films
| Autor: | K. Tokunaga, T. Yikegaki, K. Arai, A. Kashiwagi, T. Fujikawa, Jun'ichi Tsukajima, Toshinori Hayashi, S. Usami, S. Takatoh, Toshihiko Suzuki, Toru Enokijima |
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| Rok vydání: | 1996 |
| Předmět: |
Scattering
Electron energy loss spectroscopy Metals and Alloys Analytical chemistry Mineralogy Surfaces and Interfaces Chemical vapor deposition XANES Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Silicon nitride chemistry Materials Chemistry Thin film Silicon oxide Absorption (electromagnetic radiation) |
| Zdroj: | Thin Solid Films. :318-320 |
| ISSN: | 0040-6090 |
| Popis: | Nitrogen K-edge electron energy loss near-edge structure (ELNES) spectra of thin SiN x films were measured with a small scattering angle in the reflection mode for the first time. The SiNx films were formed by low pressure chemical vapour deposition (LPCVD) on silicon oxide layers with or without rapid thermal nitridation (RTN) pretreatment. The ELNES spectra were found to be similar to the X-ray absorption near-edge structure (XANES) spectra, and to be sensitive to the outermost SiN x structures. The ELNES spectra of the silicon oxide and SiN x films with RTN pretreatment were similar and independent of the thickness. The ELNES spectra of the SiN x films with RTN pretreatment and a thicker SiN x film (7.7 nm) without RTN pretreatment were also similar. However, very thin SiN x films (thickness, 0.4 or 0.6 nm) without RTN pretreatment showed slightly different ELNES spectra from the thicker film without RTN pretreatment and SiN x films with RTN pretreatment. |
| Databáze: | OpenAIRE |
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