AFM observation of OMVPE grown ErP on InP (001), (111)A and (111)B substrates

Autor:	Yasufumi Fujiwara, T. Hirata, Y. Yang, Y. Isogai, Arao Nakamura, N. Watanabe, Yoshikazu Takeda, S. Jinno, T. Kuno, T. Akane
Rok vydání:	2003
Předmět:	Crystallography Materials science Mechanics of Materials Atomic force microscopy business.industry Mechanical Engineering Step edges Optoelectronics General Materials Science Substrate (electronics) Condensed Matter Physics Epitaxy business
Zdroj:	Materials Science in Semiconductor Processing. 6:461-464
ISSN:	1369-8001
DOI:	10.1016/j.mssp.2003.07.031
Popis:	ErP has been grown on InP (0 0 1), (1 1 1)A and (1 1 1)B substrates by low-pressure organometallic vapor-phase epitaxy. The morphological change with growth temperature has been explored by atomic force microscope. On all the substrates, ErP is grown in island structure. Height and area size of the ErP islands on (1 1 1)A substrate exhibit an obvious dependence on growth temperature. ErP islands grown at 540°C, that is the suitable temperature for ErP formation, gather to step edges to make wires.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::744f67821be3a6f5752d308338268703 https://doi.org/10.1016/j.mssp.2003.07.031 Zobrazit plný text záznamu Full Text from ScienceDirect