A new channel of phonon emission induced by metastable centres of highly planar-doped GaAs:Si
| Autor: | M Asche, Rudolf Hey, A Klimashov, B Danilchenko |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Silicon
Chemistry Phonon Doping chemistry.chemical_element Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Time of flight Planar Condensed Matter::Superconductivity Ballistic conduction Metastability Electric field Materials Chemistry Condensed Matter::Strongly Correlated Electrons Electrical and Electronic Engineering Atomic physics |
| Zdroj: | Semiconductor Science and Technology. 15:744-747 |
| ISSN: | 1361-6641 0268-1242 |
| Popis: | The influence of metastable centres on the phonon emission of highly planar-doped GaAs:Si is studied by time of flight measurements. A general decrease of the flux of ballistically propagating phonons is observed in the whole investigated range of electric fields. It is assumed to be mainly caused by a redistribution of emitted phonons due to the creation of vibronic states. An additional channel of the emission of quasi-diffusively propagating phonons appears on account of the formation of metastable centres and their decay according to a dynamic balance. |
| Databáze: | OpenAIRE |
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