Applications of MBE grown PHEMTs

Autor: M.P. Zaitlin, J.V. DiLorenzo, B. Lauterwasser
Rok vydání: 1997
Předmět:
Zdroj: Journal of Crystal Growth. :1-7
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(96)01224-9
Popis: In the last decade pseudomorphic high electron mobility transistors (PHEMTs) have gone from a laboratory curiosity with unique low-noise performance to a high-volume commercial product for a variety of power and low-noise applications. At Raytheon Microelectronics, we currently use several thousand 4 in PHEMT wafers per year and expect this quantity to grow rapidly in the next few years. We describe a variety of PHEMT circuits for military, space, and commercial applications.
Databáze: OpenAIRE
Externí odkaz: