Enhanced p-type conductivity in N-polar GaN photocathode structures and correlation with GaN hillock density (Conference Presentation)

Autor:	Vincent Meyers, L. D. Bell, Emma Rocco, Kasey Hogan, Isra Mahaboob, Baishakhi Mazumder, B. McEwen, Fatemah Shadi Shahedipour-Sandvik, Steven W. Novak, Sean Tozier
Rok vydání:	2019
Předmět:	Materials science business.industry Optoelectronics Polar Conductivity business Photocathode Hillock
Zdroj:	Gallium Nitride Materials and Devices XIV.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::744b37dcc852529829dcda7562e15941 https://doi.org/10.1117/12.2510035 Zobrazit plný text záznamu