Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires

Autor:	Li-Chyong Chen, H. M. Lin, Kuei-Hsien Chen, Chia Chun Chen, A. Datta, Chien Ting Wu, Chi Wei Hsu, Yuh-Lin Wang, Sandip Dhara, Zon Huang Lan
Rok vydání:	2003
Předmět:	Materials science Ion implantation Physics and Astronomy (miscellaneous) business.industry Annealing (metallurgy) Doping Nanowire Optoelectronics Chemical vapor deposition business Epitaxy Focused ion beam Crystallographic defect
Zdroj:	Applied Physics Letters. 82:451-453
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1536250
Popis:	Ga+ ion implantation of chemical-vapor-deposited GaN nanowires (NWs) is studied using a 50-keV Ga+ focused ion beam. The role of dynamic annealing (defect-annihilation) is discussed with an emphasis on the fluence-dependent defect structure. Unlike heavy-ion-irradiated epitaxial GaN film, large-scale amorphization is suppressed until a very high fluence of 2×1016 ions cm−2. In contrast to extended-defects as reported for heavy-ion-irradiated epitaxial GaN film, point-defect clusters are identified as major component in irradiated NWs. Enhanced dynamic annealing induced by high diffusivity of mobile point-defects in the confined geometry of NWs is identified as the probable reason for observed differences.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7445ac19b15ae9410be83ae3ee6d78bb https://doi.org/10.1063/1.1536250 Zobrazit plný text záznamu