NiGe on Ge(001) by reactive deposition epitaxy: An in situ ultrahigh-vacuum transmission-electron microscopy study

Autor:	Y. L. Foo, R. Nath, M. Yeadon, Xiaoqing Pan, Dongzhi Chi, Chris Boothroyd, C. W. Soo, Haiping Sun, Y. B. Chen
Rok vydání:	2005
Předmět:	In situ Crystallography Pole piece Physics and Astronomy (miscellaneous) Transmission electron microscopy Phase (matter) Microscopy Orthorhombic crystal system Substrate (electronics) Epitaxy
Zdroj:	Applied Physics Letters. 86:201908
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1929100
Popis:	We use an ultrahigh-vacuum transmission-electron microscopy, equipped with an electron-beam evaporator directed at a heating stage in the pole piece, to follow the reaction pathway of Ni on Ge(001) substrate at 300 °C. Using reactive deposition, we illustrate that epitaxial orthorhombic NiGe (a=5.381A, b=3.428A, and c=5.811A) phase can be grown directly without the initial formation of metal-rich Ni2Ge phase. The epitaxial orientation of the NiGe islands and the underlying Ge(001) substrate were found to be NiGe(1¯01)∕∕Ge(001) and NiGe[010]∕∕Ge[110].
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7443686264e1577fb577c6ada4ae2727 https://doi.org/10.1063/1.1929100 Zobrazit plný text záznamu