Employing Scanning Spreading Resistance Microscopy (SSRM) for Improving TCAD Simulation Accuracy of Silicon Carbide
| Autor: | Rudolf Elpelt, Bernd Zippelius, S. Doering, U. Winkler |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Spreading resistance profiling business.industry Mechanical Engineering Doping Device Properties 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Characterization (materials science) chemistry.chemical_compound chemistry Mechanics of Materials 0103 physical sciences Microscopy Electronic engineering Silicon carbide Optoelectronics General Materials Science New device Process simulation 0210 nano-technology business |
| Zdroj: | Materials Science Forum. 897:295-298 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.897.295 |
| Popis: | Computer-Aided-Design for the prediction of the technology process and the physical device properties (TCAD) is a key tool for the development and improvement of new device concepts as well as for the analysis and understanding of device properties and device behavior under application conditions. Apart from physical device models and parameters the precise process simulation of implanted doping profiles is mandatory for a sufficient prediction quality of the subsequent device simulations. In order to verify and improve the accuracy of process simulation, we employ the – for silicon carbide – relatively new method of Scanning Spreading Resistance Microscopy (SSRM) for the characterization of doping profiles. |
| Databáze: | OpenAIRE |
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