Projected range and straggling measurements of low energy nitrogen in silicon

Autor:	J. B. Malherbe
Rok vydání:	1983
Předmět:	Auger electron spectroscopy Low energy Argon Silicon Physics::Instrumentation and Detectors Sputtering Chemistry General Engineering chemistry.chemical_element Atomic physics Nitrogen Ion
Zdroj:	Radiation Effects. 70:261-274
ISSN:	0033-7579
DOI:	10.1080/00337578308219221
Popis:	The projected ranges and straggling of 0.25 to 2.5 keV nitrogen atoms in silicon were determined by means of Auger electron spectroscopy combined with argon sputter depth profiling. The results show excellent correspondence with experimental measurements of other ions in silicon. However a considerable discrepancy exists between various theoretical predictions and the measured projected ranges. This discrepancy is attributed to inaccuracies in the theories in the low energy region.
Databáze:	OpenAIRE
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