| Autor: |
J.C. Patel, Johnny Widodo, Anita Madan, Robert L. Wisnieff, Darryl D. Restaino, Brian Wayne Herbst, Spooner Terry A, Jason Gill, Hosadurga Shobha, C. Labelle, Stephan A. Cohen, Michael Lane, Eva E. Simonyi, Kelly Malone, X.-H. Liu, Y. Shimooka, Christopher D. Muzzy, Griselda Bonilla, P. Minami, Alfred Grill, John A. Fitzsimmons, T. H. Ivers, Steven E. Molis, Eric G. Liniger, Son Nguyen, Vincent J. McGahay, Robert Hannon, Henry A. Nye, T. Lee, Brett H. Engel, M. Kiene, F. Chen, Stephan Grunow, Cathryn Christiansen, M. Cullinan-Scholl, Derren N. Dunn, Timothy M. Shaw, Habib Hichri, Jeremy L. Martin, N. Klymko, P.V. McLaughlin, K. Ida, James J. Demarest, A. Sakamoto |
| Rok vydání: |
2006 |
| Předmět: |
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| Zdroj: |
2006 International Interconnect Technology Conference. |
| Popis: |
A low tensile stress SiCOH dielectric with K=2.15 has been developed for implementation in the 2times and 4times fatwire levels for enhanced RC performance in the 65nm technology node. Integration challenges related to mechanical integrity and process-induced damage were successfully overcome. Yield and interconnect reliability metrics comparable to dense K=3 SiCOH have been achieved. Package deep thermal cycle showed sensitivity to assembly which is controllable though chip edge structural engineering |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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