Microstructure Evolution and Defect Formation in Cu Through-Silicon Vias (TSVs) During Thermal Annealing
| Autor: | Dong-Ik Kim, Ho-Young Son, Ju-Heon Kim, Arief Suriadi Budiman, Hae-A. Seul Shin, Nobumichi Tamura, Martin Kunz, Byoung-Joon Kim, Young-Chang Joo, Sung-Hwan Hwang, Kwang-Yoo Byun |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Solid-state physics Silicon Annealing (metallurgy) Metallurgy chemistry.chemical_element Condensed Matter Physics Microstructure Copper Grain size Electronic Optical and Magnetic Materials Grain growth chemistry Materials Chemistry Electrical and Electronic Engineering Stress concentration |
| Zdroj: | Journal of Electronic Materials. 41:712-719 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | The microstructural evolution of Cu through-silicon vias (TSVs) during thermal annealing was investigated by analyzing the Cu microstructure and the effects of twin boundaries and stress in the TSV. The Cu TSV had two regions with different grain sizes between the center and the edge with a random Cu texture before and after annealing. The grain size of large grains was almost unchanged after annealing, and the abrupt grain growth was restricted by the twin boundaries due to their structural stability. However, microvoids and cracks in the Cu TSV were observed after annealing. These defects were formed by the stress concentration among Cu grains. After defects were formed, the stress level of the TSV was decreased after annealing. |
| Databáze: | OpenAIRE |
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