Strong correlation between capacitance and breakdown voltage of GaInN/GaN light-emitting diodes

Autor:	Jong Kyu Kim, Erdmann Frederick Schubert, Dong Yeong Kim, Jaehee Cho, Joong Kon Son
Rok vydání:	2014
Předmět:	Reverse leakage current Materials science Avalanche diode Depletion region business.industry Capacitance–voltage profiling Optoelectronics Breakdown voltage business p–n junction Capacitance Electronic Optical and Magnetic Materials Diode
Zdroj:	Electronic Materials Letters. 10:1155-1157
ISSN:	2093-6788 1738-8090
Popis:	Investigating the relationship between the breakdown voltage and the capacitance of GaInN light-emitting diodes (LEDs), we find that a lower capacitance due to weaker internal electric field in depletion region or wider depletion width at the pn junction results in lower reverse leakage current and thus larger breakdown voltage. The measured breakdown voltage and capacitance of LEDs show a strong correlation, opening a nondestructive and non-intrusive way to estimate the breakdown voltage of an LED based on the capacitance-voltage measurement.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7428f56071344e26d6c52535263ffff0 https://doi.org/10.1007/s13391-014-4008-7 Zobrazit plný text záznamu Full text from SpringerLink