Surface migration effect and lateral vapor-phase diffusion effect for InGaAsP/InP narrow-stripe selective metal-organic vapor-phase epitaxy
| Autor: | Keiro Komatsu, Yasutaka Sakata, Y. Inomoto |
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| Rok vydání: | 2000 |
| Předmět: |
Masking (art)
business.industry Chemistry Astrophysics::Instrumentation and Methods for Astrophysics food and beverages Mineralogy Dielectric Condensed Matter Physics Epitaxy Organic vapor Inorganic Chemistry Metal Computer Science::Sound visual_art Phase (matter) Materials Chemistry visual_art.visual_art_medium Optoelectronics Metalorganic vapour phase epitaxy Diffusion (business) business |
| Zdroj: | Journal of Crystal Growth. 208:130-136 |
| ISSN: | 0022-0248 |
| Popis: | Migration from a masked region and lateral vapor-phase diffusion are the mechanisms of growth-rate enhancement and compositional change for InGaAsP/InP selective metal-organic vapor-phase epitaxy (MOVPE). A novel threshold mask width where the lateral vapor-phase diffusion starts to occur is proposed. When the mask width is less than the threshold mask width, the major mechanism of selective MOVPE is the surface migration from the dielectric mask region, and the lateral vapor-phase diffusion is very small. On the other hand, when the mask width is larger than the threshold mask width, the major mechanism of selective MOVPE switches to lateral vapor-phase diffusion. We discuss the effective migration length on a dielectric mask and the mechanism of the narrow-stripe selective MOVPE for several growth conditions by considering the concept of the threshold mask width. |
| Databáze: | OpenAIRE |
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