A fast-neutron detector based on single-crystalline silicon

Autor:	E. S. Solodovnikov, V. A. Varlachev
Rok vydání:	2008
Předmět:	Materials science Observational error Silicon Physics::Instrumentation and Detectors business.industry Astrophysics::High Energy Astrophysical Phenomena Doping chemistry.chemical_element Fluence Optics chemistry Neutron detection Neutron Wafer Crystalline silicon business Instrumentation
Zdroj:	Instruments and Experimental Techniques. 51:171-174
ISSN:	1608-3180 0020-4412
DOI:	10.1134/s0020441208020036
Popis:	It is shown that the change of the specific electrical conductivity (SEC) of silicon single crystals in the process of their irradiation is directly proportional to the fast-neutron fluence. This is used as the basis of the principle of the neutron-flux detection. The coefficient of proportionality depends on the neutron spectrum, but does not depend on the initial SEC, which significantly simplifies detector calibration. A set of wafers with different SEC values has been manufactured using the technology silicon neutron-transmutation doping. The SEC has been measured by the four-probe method. A simple method for measuring the SEC without recourse to any special setup is proposed. The random measurement error of the fast-neutron fluence was ∼10%, and the absolute one was ∼37%.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::741e07d12332f529f9585db07b7f803a https://doi.org/10.1134/s0020441208020036 Zobrazit plný text záznamu Plný text ve formátu PDF