Highly Efficient 5.15- to 5.85-GHz Neutralized HBT Power Amplifier for LTE Applications
| Autor: | Moon-Suk Jeon, Jung-Hyun Kim, Sungyoon Kang |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
business.industry Heterojunction bipolar transistor Amplifier 020208 electrical & electronic engineering Electrical engineering dBc 020206 networking & telecommunications 02 engineering and technology Condensed Matter Physics Capacitance Handset law.invention Capacitor law 0202 electrical engineering electronic engineering information engineering Adjacent channel Electrical and Electronic Engineering Transformer business |
| Zdroj: | IEEE Microwave and Wireless Components Letters. 28:254-256 |
| ISSN: | 1558-1764 1531-1309 |
| Popis: | A highly efficient fully integrated 5.15- to 5.85-GHz GaAs HBT differential power amplifier (PA) is implemented for long-term evolution (LTE) handset applications considering LTE licensed-assisted access. A simple and practical output network, based on an on-chip transformer, is proposed to achieve low loss. A neutralization technique to mitigate the parasitic base–collector capacitance is also adopted to improve PA performances. The implemented PA achieved a high gain of 26.6–28.1 dB and saturated power of 30.5–31.1 dBm with a high peak power-added efficiency of 40.4%–44.5% under a continuous-wave signal test across 5.15–5.85 GHz. When tested with 20- and 40-MHz bandwidth quadrature phase-shift keying LTE signals, the PA showed an adjacent channel leakage ratio of −33 dBc up to output powers of 24.1–24.4 and 22.2–22.8 dBm, respectively. |
| Databáze: | OpenAIRE |
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