Two-Sided Silicon Nanowire Array/Bulk Thermoelectric Power Generator
Autor: | Kristel Fobelets, Bin Xu, Wasim Khouri |
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Rok vydání: | 2014 |
Předmět: |
Materials science
Silicon business.industry Doping Nanowire chemistry.chemical_element Power factor Isotropic etching Nanowire array Electronic Optical and Magnetic Materials chemistry Seebeck coefficient Electronic engineering Optoelectronics Electrical and Electronic Engineering Silicon nanowires business |
Zdroj: | IEEE Electron Device Letters. 35:596-598 |
ISSN: | 1558-0563 0741-3106 |
Popis: | To improve the output power of n-and p-type Si nanowire array (NWA)/bulk thermoelectric power generators (TEGs) fabricated using metal assisted chemical etching, post-nanowire-etch spin-on-doping (SOD), and arrays on both sides of the bulk are used. Post-process SOD increases the power factor and removes surface depletion/inversion effects while maintaining crystalline NWs. A maximum output power of 3.5 μW for a p-NWA/bulk/NWA TEG with NWA length of 23 and 24 μm is obtained for an external temperature difference of 37 °C and a TEG area of 25 mm2. |
Databáze: | OpenAIRE |
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