The effects of Na and some additives on nitrogen dissolution in the Ga-Na system: A growth mechanism of GaN in the Na flux method
| Autor: | Masanori Morishita, Kunimichi Omae, Yusuke Mori, Fumio Kawamura, Masashi Yoshimura, Takatomo Sasaki |
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| Rok vydání: | 2005 |
| Předmět: |
Flux method
Materials science Inorganic chemistry chemistry.chemical_element Condensed Matter Physics Nitrogen Atomic and Molecular Physics and Optics System a Electronic Optical and Magnetic Materials chemistry Ionization Nitrogen gas Electrical and Electronic Engineering Solubility Single crystal Dissolution |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 16:29-34 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-005-4955-8 |
| Popis: | In the growth of GaN single crystal using the Na flux method, we succeeded in clarifying the role of Na in promoting nitrogen dissolution in the Ga-Na melt system above 900 K. At the gas-liquid interface of high temperature Ga-Na melt, Na functions to ionize the nitrogen gas. The ionization of the nitrogen gas results in drastic increase of nitrogen dissolution in the melt. In consequence, these synthesize GaN single crystals easily. On the other hand, the addition of a minor amount of Ca or Li to the Ga-Na melt system also increases the nitrogen dissolution. However, the additives function to maintain the nitrogen dissolved in the Ga-Na melt, which results in drastic increase in the nitrogen concentration. In the present study, we report the solubility of GaN in the Ga-Na system and the threshold pressure of nitrogen gas to grow GaN. On the basis of these data, we propose a growth mechanism of GaN and the role of additives to maintain nitrogen. |
| Databáze: | OpenAIRE |
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