Magnesium Doping of In-rich InGaN
| Autor: | Chin-An Chang, Tzu-Yu Tang, Pen-Hsiu Chang, Nie-Chuan Chen, Chi-Te Liang |
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| Rok vydání: | 2007 |
| Předmět: | |
| Zdroj: | Japanese Journal of Applied Physics. 46:2840-2843 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.46.2840 |
| Popis: | InN and In-rich InGaN were grown by metal organic vapor phase epitaxy with magnesium doping. A set of samples were grown at 550 °C, whereas a second set of samples were grown at increasing temperature with Ga content. Upon annealing, p-InGaN was obtained from the second set up to an In content above 50%, with an acceptor concentration of ~1×1019 cm-3 and a mobility of 1–2 cm2 V-1 s-1. None of the samples grown at a constant temperature of 550 °C showed a p-behavior after heat treatment. The electrical, optical, structural and morphological characteristics of the films grown were analyzed, and the leveling off of hole concentration beyond an In content of 30% was consistent with the reported decreasing activation energy of Mg with increasing In content. |
| Databáze: | OpenAIRE |
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